may 2009 1 mitsubishi high voltage diode module RM600DY-66S high power switching use insulated type i f ................................................................... 600a v rrm ...................................................... 3300v insulated type 2-element in a pack copper baseplate application tr action drives, high reliability converters / inverters, dc choppers RM600DY-66S outline drawing & circuit diagram dimensions in mm high voltage diode module high voltage diode module (c) (c) (e) (e) k2 circuit diagram a2 k1 a1 label 4-m8 nuts c ee c g e c k1 k2 a1 a2 57 0.25 57 0.25 20 124 0.25 140 130 114 5 38 18 61.5 15 30 40 6- 7 mounting holes
may 2009 2 mitsubishi high voltage diode module RM600DY-66S high power switching use insulated type maximum ratings symbol item conditions unit ratings high voltage diode module high voltage diode module typ max electrical characteristics symbol item conditions limits note 1. it doesn't include the voltage drop by internal lead resistance. 2. e rec is the integral of 0.1v r x 0.1i rr x dt. repetitive peak reverse voltage non-repetitive peak reverse voltage reverse dc voltage dc forward current surge forward current current-squared, time integration isolation voltage junction temperature operating temperature storage temperature t j = 25 c t j = 25 c t j = 25 c t c = 25 c t j = 25 c start, t w = 8.3 ms half sign wave t j = 25 c start, t w = 8.3 ms half sign wave charged part to the baseplate rms sinusoidal, 60hz 1min. 3300 3300 2200 600 4800 96 6000 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 v v v a a ka 2 s v c c c v rrm v rsm v r(dc) i f i fsm i 2 t v iso t j t op t stg ma v s a c j/p v rm = v rrm i f = 600 a tj = 25 c tj = 125 c tj = 25 c tj = 125 c repetitive reverse current forward voltage (note 1) reverse recovery time reverse recovery current reverse recovery charge reverse recovery energy (note 2) 4.0 15 4.55 3.75 3.75 0.75 450 300 0.23 i rrm v fm t rr i rr q rr e rec v r = 1650 v, i f = 600 a di/dt = ?200 a/ s l s =200nh, t j = 125 c min unit
may 2009 3 mitsubishi high voltage diode module RM600DY-66S high power switching use insulated type high voltage diode module high voltage diode module min typ max thermal characteristics symbol item conditions limits unit min typ max mechanical characteristics symbol item conditions limits unit m t m s m m8: main terminals screw m6: mounting screw n? n? kg mounting torque mass 8.24 3.43 1.5 6.67 2.84 performance curves r th(j-c) r th(c-f) junction to case (per 1/2 module) case to fin, grease = 1w/m? d (c-f) =100 m, (per 1/2 module) k/kw k/kw thermal resistance contact thermal resistance 48.0 24.0 reverse recovery energy characteristics (typical) forward characteristics (typical) forward voltage v f (v) forward current i f (a) t j = 25 c t j = 125 c 0 1200 1000 800 400 600 200 024 7 6 135 0 200 800 400 1200 600 1000 1400 0 0.4 0.3 0.2 0.1 forward current i f (a) reverse recovery energy e rec (j/p) v r = 1650v, di/dt = 1200a/ s t j = 125 c, l s = 200nh
may 2009 4 mitsubishi high voltage diode module RM600DY-66S high power switching use insulated type high voltage diode module high voltage diode module forward current i f (a) reverse recovery characteristics (typical) normalized transient thermal impedance transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 time (s) 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 -2 10 -3 23 57 10 -1 23 57 10 0 23 57 10 1 23 57 reverse recovery time t rr ( s) reverse recovery current i rr (a) reverse recovery current i rr (a) 10 3 10 2 23 57 10 4 23 5 447 reverse recovery safe operating area (rrsoa) reverse voltage v r (v) 0 1000 3000 2000 4000 0 400 1200 800 600 1000 200 1400 1600 v r 2200v, di/dt 1450a/ s t j = 125 c i rr t rr r th(j?) = 48k/kw v r = 1650v, di/dt = 1200a/ s t j = 125 c, l s = 200nh
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